STV250N55F3

STMicroelectronics

STV250N55F3

Datasheet

Analog & Power

MOSFET N-CH 55V 200A 10POWERSO

ObsoletePowerSO-10 Exposed Bottom PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.2mOhm @ 75A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6800 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSTripFET™ III
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage55 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation300W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CasePowerSO-10 Exposed Bottom Pad
Supplier Device Package10-PowerSO

Environmental

Operating Temperature-55°C ~ 175°C (TJ)