STT3P2UH7

STMicroelectronics

STT3P2UH7

Datasheet

Analog & Power

MOSFET P-CH 20V 3A SOT23-6

ObsoleteSOT-23-6Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 1.5A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds510 pF @ 10 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Max Power Dissipation1.6W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseSOT-23-6
Supplier Device PackageSOT-23-6

Environmental

Operating Temperature150°C (TJ)