STS4C3F60L

STMicroelectronics

STS4C3F60L

Analog & Power

MOSFET N/P-CH 60V 4A/3A 8SOIC

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 2A, 10V
Base Product NumberSTS4C
ConfigurationN and P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs20.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage60V
Current - Continuous Drain (Id) @ 25°C4A, 3A
Power - Max2W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)