STS2DPFS20V

STMicroelectronics

STS2DPFS20V

Datasheet

Analog & Power

MOSFET P-CH 20V 2.5A 8SO

Obsolete8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs200mOhm @ 1A, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 15 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSTripFET™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)

Electrical

Drain-to-Source Voltage20 V
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Max Power Dissipation2W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature150°C (TJ)