STS10P4LLF6

STMicroelectronics

STS10P4LLF6

Datasheet

Analog & Power

MOSFET P-CH 40V 10A 8SO

Active8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 3A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3525 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSTripFET™ F6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1V @ 250µA (Min)

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Max Power Dissipation2.7W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature150°C (TJ)