STS10DN3LH5

STMicroelectronics

STS10DN3LH5

Datasheet

Analog & Power

MOSFET 2N-CH 30V 10A 8SOIC

Discontinued8-SOIC (0.154", 3.90mm Width)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs21mOhm @ 5A, 10V
Base Product NumberSTS10
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs4.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds475pF @ 25V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusNot For New Designs
SeriesSTripFET™ V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA

Electrical

Drain-to-Source Voltage30V
Current - Continuous Drain (Id) @ 25°C10A
Power - Max2.5W

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SOIC

Environmental

Operating Temperature-55°C ~ 150°C (TJ)