STP80N6F6

STMicroelectronics

STP80N6F6

Datasheet

Analog & Power

MOSFET N-CH 60V 110A TO220

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.8mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7480 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusObsolete
SeriesDeepGATE™, STripFET™ VI
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Max Power Dissipation120W (Tc)

Mechanical

PackageTube

Environmental

GradeAutomotive
Operating Temperature-55°C ~ 175°C (TJ)
QualificationAEC-Q101