STP77N6F6

STMicroelectronics

STP77N6F6

Analog & Power

MOSFET N-CH 60V 77A TO220

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs7mOhm @ 38.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusObsolete
SeriesDeepGATE™, STripFET™ VI
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C77A (Tc)
Max Power Dissipation80W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature-55°C~175°C(TJ)