STP6NC60

STMicroelectronics

STP6NC60

Analog & Power

MOSFET N-CH 600V 6A TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.2Ohm @ 3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1020 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusObsolete
SeriesPowerMESH™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Max Power Dissipation125W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature150°C (TJ)