STP62NS04Z

STMicroelectronics

STP62NS04Z

Datasheet

Analog & Power

MOSFET N-CH 33V 62A TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1330 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusObsolete
SeriesMESH OVERLAY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)Clamped
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage33 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C62A (Tc)
Max Power Dissipation110W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature-55°C ~ 175°C (TJ)