STP60NE06L-16

STMicroelectronics

STP60NE06L-16

Datasheet

Analog & Power

MOSFET N-CH 60V 60A TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs14mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs70 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds4150 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusObsolete
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±15V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Max Power Dissipation150W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature175°C (TJ)