STP60N3LH5

STMicroelectronics

STP60N3LH5

Analog & Power

MOSFET N-CH 30V 48A TO220AB

ObsoleteTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs8.4mOhm @ 24A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1350 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusObsolete
SeriesSTripFET™ V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Max Power Dissipation60W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220

Environmental

Operating Temperature-55°C ~ 175°C (TJ)