STP11NM60FD

STMicroelectronics

STP11NM60FD

Datasheet

Analog & Power

MOSFET N-CH 600V 11A TO220AB

ActiveTO-220-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs450mOhm @ 5.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesFDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation160W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3
Supplier Device PackageTO-220