STO65N60DM6

STMicroelectronics

STO65N60DM6

Datasheet

Analog & Power

N-CHANNEL 600 V, 67 MOHM TYP., 4

Active8-PowerSFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs76mOhm @ 23A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs65.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesMDmesh™ DM6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4.75V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Max Power Dissipation320W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerSFN
Supplier Device PackageTOLL (HV)

Environmental

Operating Temperature-55°C~150°C(TJ)