STN3N45K3

STMicroelectronics

STN3N45K3

Datasheet

Analog & Power

MOSFET N-CH 450V 600MA SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs4Ohm @ 600mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds164 pF @ 50 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSuperMESH3™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

Electrical

Drain-to-Source Voltage450 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C600mA (Tc)
Max Power Dissipation3W (Ta)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature150°C (TJ)