STN2NE10

STMicroelectronics

STN2NE10

Datasheet

Analog & Power

MOSFET N-CH 100V 2A SOT-223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs400mOhm @ 1A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds305 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Max Power Dissipation2.5W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature150°C (TJ)