STN1NK60Z

STMicroelectronics

STN1NK60Z

Datasheet

Analog & Power

MOSFET N-CH 600V 300MA SOT223

ActiveTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs15Ohm @ 400mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds94 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSuperMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C300mA (Tc)
Max Power Dissipation3.3W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature-55°C~150°C(TJ)