STN1N20

STMicroelectronics

STN1N20

Datasheet

Analog & Power

MOSFET N-CH 200V 1A SOT223

ObsoleteTO-261-4, TO-261AAAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.5Ohm @ 500mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds206 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesMESH OVERLAY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Max Power Dissipation2.9W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223

Environmental

Operating Temperature-55°C ~ 150°C (TJ)