STL8N6F7

STMicroelectronics

STL8N6F7

Datasheet

Analog & Power

MOSFET N-CH 60V 36A POWERFLAT

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs25mOhm @ 4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSTripFET™ F7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Max Power Dissipation3W (Ta), 60W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (3.3x3.3)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)