STL8N65M5

STMicroelectronics

STL8N65M5

Analog & Power

MOSFET N-CH 650V 7A POWERFLAT

Obsolete14-PowerVQFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs600mOhm @ 3.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds690 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesMDmesh™ V
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.4A (Ta), 7A (Tc)
Max Power Dissipation2.5W (Ta), 70W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case14-PowerVQFN
Supplier Device PackagePowerFLAT™ (5x5)

Environmental

Operating Temperature150°C(TJ)