STL60N10F7

STMicroelectronics

STL60N10F7

Datasheet

Analog & Power

MOSFET N-CH 100V 46A POWERFLAT

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs18mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1640 pF @ 50 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesDeepGATE™, STripFET™ VII
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Max Power Dissipation5W (Ta), 72W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)