STL3N10F7

STMicroelectronics

STL3N10F7

Datasheet

Analog & Power

MOSFET N-CH 100V 4A POWERFLAT

Active6-PowerWDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs70mOhm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds408 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesDeepGATE™, STripFET™ VII
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Max Power Dissipation2.4W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case6-PowerWDFN
Supplier Device PackagePowerFlat™ (2x2)

Environmental

Operating Temperature-55°C ~ 150°C (TJ)