STL19N60M2

STMicroelectronics

STL19N60M2

Datasheet

Analog & Power

MOSFET N-CH 600V 11A PWRFLAT HV

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Base Product NumberSTL19
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds791 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesMDmesh™ M2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation90W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (8x8) HV

Environmental

Operating Temperature-55°C ~ 150°C (TJ)