STL19N60DM2

STMicroelectronics

STL19N60DM2

Analog & Power

MOSFET N-CH 600V 11A PWRFLAT HV

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs320mOhm @ 5.5A, 10V
Base Product NumberSTL19
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesMDmesh™ DM2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation90W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (8x8) HV

Environmental

Operating Temperature-55°C ~ 150°C (TJ)