STL18NM60N

STMicroelectronics

STL18NM60N

Datasheet

Analog & Power

MOSFET N-CH 600V 6A POWERFLAT

Obsolete8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs310mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1000 pF @ 50 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesMDmesh™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.1A (Ta), 12A (Tc)
Max Power Dissipation3W (Ta), 110W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (8x8) HV

Environmental

Operating Temperature150°C(TJ)