STL12P6F6

STMicroelectronics

STL12P6F6

Datasheet

Analog & Power

MOSFET P-CH 60V 4A POWERFLAT

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs160mOhm @ 1.5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 48 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesDeepGATE™, STripFET™ VI
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Max Power Dissipation75W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6)

Environmental

Operating Temperature-55°C ~ 175°C (TJ)