STL115N10F7AG

STMicroelectronics

STL115N10F7AG

Datasheet

Analog & Power

MOSFET N-CH 100V 107A POWERFLAT

Active8-PowerVDFNAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs6mOhm @ 53A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs72.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5600 pF @ 50 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount, Wettable Flank
Product StatusActive
SeriesAutomotive, AEC-Q101, STripFET™ F7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C107A (Tc)
Max Power Dissipation136W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / Case8-PowerVDFN
Supplier Device PackagePowerFlat™ (5x6)

Environmental

Operating Temperature-55°C~175°C(TJ)