Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 660mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 427 pF @ 100 V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Series | MDmesh™ K5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Drain-to-Source Voltage | 800 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Max Power Dissipation | 42W (Tc) |
| Package | Tape & Reel (TR) |
|---|---|
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PowerFlat™ (5x6) VHV |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|