Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 750mOhm @ 4A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | SuperMESH3™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Drain-to-Source Voltage | 620 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Max Power Dissipation | 125W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package | I2PAK |
| Operating Temperature | -55°C ~ 150°C (TJ) |
|---|