STH410N4F7-2AG

STMicroelectronics

STH410N4F7-2AG

Datasheet

Analog & Power

MOSFET N-CH 40V 200A H2PAK-2

ActiveTO-263-3, D²Pak (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.1mOhm @ 90A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11500 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesAutomotive, AEC-Q101, STripFET™ F7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Max Power Dissipation365W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageH2Pak-2

Environmental

Operating Temperature-55°C~175°C(TJ)