STH3N150-2

STMicroelectronics

STH3N150-2

Datasheet

Analog & Power

MOSFET N-CH 1500V 2.5A H2PAK

ActiveTO-263-3, D²Pak (2 Leads + Tab) VariantAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs9Ohm @ 1.3A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds939 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesPowerMESH™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage1500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)
Max Power Dissipation140W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab) Variant
Supplier Device PackageH²PAK

Environmental

Operating Temperature150°C(TJ)