STH240N10F7-6

STMicroelectronics

STH240N10F7-6

Datasheet

Analog & Power

MOSFET N-CH 100V 180A H2PAK-6

ActiveTO-263-7, D²Pak (6 Leads + Tab)Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs2.5mOhm @ 60A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11550 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSTripFET™ F7
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4.5V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Max Power Dissipation300W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Supplier Device PackageH2PAK-6

Environmental

Operating Temperature-55°C ~ 175°C (TJ)