STH13N120K5-2AG

STMicroelectronics

STH13N120K5-2AG

Datasheet

Analog & Power

MOSFET N-CH 1200V 12A H2PAK-2

ActiveTO-263-3, D2PAK (2 Leads + Tab), TO-263ABAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs690mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs44.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 100µA

Electrical

Drain-to-Source Voltage1200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation250W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device PackageH2PAK-2

Environmental

Operating Temperature-55°C ~ 150°C (TJ)