STGYA120M65DF2

STMicroelectronics

STGYA120M65DF2

Datasheet

Analog & Power

TRENCH GATE FIELD-STOP IGBT, M S

ActiveTO-247-3 Exposed PadAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge420 nC
IGBT TypeNPT, Trench Field Stop
Input TypeStandard
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)202 ns
SeriesM
Switching Energy1.8mJ (on), 4.41mJ (off)
Td (on/off) @ 25°C66ns/185ns
Test Condition400V, 120A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 120A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)160 A
Current - Collector Pulsed (Icm)360 A
Power - Max625 W

Mechanical

PackageTube
Package / CaseTO-247-3 Exposed Pad
Supplier Device PackageMAX247™

Environmental

Operating Temperature-55°C ~ 175°C (TJ)