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Home/Products/Discrete Semiconductor Products/Transistors - IGBTs - Single/STGW75M65DF2
STGW75M65DF2

STMicroelectronics

STGW75M65DF2

Datasheet

Analog & Power

TRENCH GATE FIELD-STOP IGBT M SE

ActiveTO-247-3Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Gate Charge225 nC
IGBT TypeTrench Field Stop
Input TypeStandard
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
Reverse Recovery Time (trr)165 ns
SeriesM
Switching Energy690µJ (on), 2.54mJ (off)
Td (on/off) @ 25°C47ns/125ns
Test Condition400V, 75A, 3.3Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 75A

Electrical

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)120 A
Current - Collector Pulsed (Icm)225 A
Power - Max468 W

Mechanical

PackageTube
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

Environmental

Operating Temperature-55°C~175°C(TJ)

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