Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 3mOhm @ 60A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11400 pF @ 25 V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Product Status | Obsolete |
| Series | DeepGATE™, STripFET™ VI |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Drain-to-Source Voltage | 60 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max Power Dissipation | 41.7W (Tc) |
| Package | Tube |
|---|---|
| Package / Case | TO-262-3 Full Pack, I²Pak |
| Supplier Device Package | I2PAKFP (TO-281) |
| Operating Temperature | -55°C~175°C(TJ) |
|---|