STF6N80K5

STMicroelectronics

STF6N80K5

Datasheet

Analog & Power

MOSFET N-CH 800V 4.5A TO220FP

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.6Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds270 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesSuperMESH5™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30V
Vgs(th) (Max) @ Id5V @ 100µA

Electrical

Drain-to-Source Voltage800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Max Power Dissipation25W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)