STF18N65DM2

STMicroelectronics

STF18N65DM2

Analog & Power

DISCRETE

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs295mOhm @ 6A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds965 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation28W (Tc)

Mechanical

PackageBulk
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)