STF13N60M2

STMicroelectronics

STF13N60M2

Datasheet

Analog & Power

N-channel 600 V, 350 Ohm typ., 1

ActiveTO-220-3 Full PackAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeThrough Hole
Product StatusActive
SeriesMDmesh™ II Plus
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation25W (Tc)

Mechanical

PackageTube
Package / CaseTO-220-3 Full Pack
Supplier Device PackageTO-220FP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)