STE70NM60

STMicroelectronics

STE70NM60

Datasheet

Analog & Power

MOSFET N-CH 600V 70A ISOTOP

ActiveISOTOPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs55mOhm @ 30A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs266 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeChassis Mount
Product StatusActive
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Max Power Dissipation600W (Tc)

Mechanical

PackageTube
Package / CaseISOTOP
Supplier Device PackageISOTOP®

Environmental

Operating Temperature150°C(TJ)