STE60N105DK5

STMicroelectronics

STE60N105DK5

Datasheet

Analog & Power

MOSFET N-CH 1050V 46A ISOTOP

ActiveISOTOPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs120mOhm @ 23A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6675 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeChassis Mount
Product StatusActive
SeriesMDmesh™ DK5
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 100µA

Electrical

Drain-to-Source Voltage1050 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Max Power Dissipation680W (Tc)

Mechanical

PackageTube
Package / CaseISOTOP
Supplier Device PackageISOTOP

Environmental

Operating Temperature-55°C ~ 150°C (TJ)