STE53NC50

STMicroelectronics

STE53NC50

Datasheet

Analog & Power

MOSFET N-CH 500V 53A ISOTOP

ActiveISOTOPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs80mOhm @ 27A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs434 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds11200 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeChassis Mount
Product StatusActive
SeriesPowerMESH™ II
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Max Power Dissipation460W (Tc)

Mechanical

PackageTube
Package / CaseISOTOP
Supplier Device PackageISOTOP®

Environmental

Operating Temperature150°C(TJ)