STE48NM50

STMicroelectronics

STE48NM50

Datasheet

Analog & Power

MOSFET N-CH 550V 48A ISOTOP

ActiveISOTOPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs100mOhm @ 24A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3700 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeChassis Mount
Product StatusActive
SeriesMDmesh™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 250µA

Electrical

Drain-to-Source Voltage550 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Max Power Dissipation450W (Tc)

Mechanical

PackageTube
Package / CaseISOTOP
Supplier Device PackageISOTOP®

Environmental

Operating Temperature150°C (TJ)