STE250NS10

STMicroelectronics

STE250NS10

Datasheet

Analog & Power

MOSFET N-CH 100V 220A ISOTOP

ObsoleteISOTOPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs5.5mOhm @ 125A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs900 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds31000 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeChassis Mount
Product StatusObsolete
SeriesSTripFET™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C220A (Tc)
Max Power Dissipation500W (Tc)

Mechanical

PackageTube
Package / CaseISOTOP
Supplier Device PackageISOTOP®

Environmental

Operating Temperature150°C (TJ)