STE110NS20FD

STMicroelectronics

STE110NS20FD

Datasheet

Analog & Power

MOSFET N-CH 200V 110A ISOTOP

ObsoleteISOTOPAnalog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs24mOhm @ 50A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs504 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7900 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeChassis Mount
Product StatusObsolete
SeriesMESH OVERLAY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Max Power Dissipation500W (Tc)

Mechanical

PackageTube
Package / CaseISOTOP
Supplier Device PackageISOTOP®

Environmental

Operating Temperature150°C (TJ)