STD4NS25T4

STMicroelectronics

STD4NS25T4

Datasheet

Analog & Power

MOSFET N-CH 250V 4A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs1.1Ohm @ 2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds355 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesMESH OVERLAY™
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage250 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Max Power Dissipation50W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature150°C (TJ)