STD28P3LLH6AG

STMicroelectronics

STD28P3LLH6AG

Datasheet

Analog & Power

MOSFET P-CH 30V 12A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs30mOhm @ 6A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1480 pF @ 25 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
SeriesAutomotive, AEC-Q101, STripFET™ H6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±18V
Vgs(th) (Max) @ Id2.5V @ 250µA

Electrical

Drain-to-Source Voltage30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Max Power Dissipation33W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature150°C (TJ)