STD18N65M2-EP

STMicroelectronics

STD18N65M2-EP

Analog & Power

MOSFET N-CH 650V 11A DPAK

ObsoleteTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs375mOhm @ 5.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 100 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusObsolete
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage650 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Max Power Dissipation110W (Tc)

Mechanical

PackageTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252)

Environmental

Operating Temperature-55°C~150°C(TJ)