STD10P10F6

STMicroelectronics

STD10P10F6

Datasheet

Analog & Power

MOSFET P-CH 100V 10A DPAK

ActiveTO-252-3, DPak (2 Leads + Tab), SC-63Analog & Power

Technical Specifications

Structured electrical, mechanical and environmental parameters from imported product attributes.

General

Rds On (Max) @ Id, Vgs180mOhm @ 5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds864 pF @ 80 V
ManufacturerSTMicroelectronics
Mounting TypeSurface Mount
Product StatusActive
SeriesSTripFET™ F6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

Electrical

Drain-to-Source Voltage100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Max Power Dissipation40W (Tc)

Mechanical

PackageTape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Environmental

Operating Temperature175°C (TJ)