Structured electrical, mechanical and environmental parameters from imported product attributes.
| Rds On (Max) @ Id, Vgs | 4mOhm @ 40A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Packaging | Tube |
| Part Status | Obsolete |
| Series | STripFET™ II |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Drain-to-Source Voltage | 30 V |
|---|---|
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Max Power Dissipation | 300W (Tc) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
|---|---|
| Supplier Device Package | I2PAK |
| Operating Temperature | -60°C ~ 175°C (TJ) |
|---|